IDT70T633S10BCI【PDF 25/27 页】IC SRAM 9MBIT 10NS 256BGA

您好，
买卖IC网欢迎您。
请登录
免费注册

21页 22页 23页 24页 [25页]26页 27页

IDT70T633/1S

High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM

Identification Register Definitions

Industrial and Commercial Temperature Ranges

Instruction Field

Revision Number (31:28)

Value

0x0

Reserved for version number

Description

IDT Device ID (27:12)

0x33B

(1)

Defines IDT part number 70T633

IDT JEDEC ID (11:1)

ID Register Indicator Bit (Bit 0)

NOTE:

1. Device ID for IDT70T631 is 0x33C.

Scan Register Sizes

Register Name

Instruction (IR)

Bypass (BYR)

Identification (IDR)

Boundary Scan (BSR)

0x33

1

Bit Size

4

1

32

Note (3)

Allows unique identification of device vendor as IDT

Indicates the presence of an ID register

5670 tbl 21

5670 tbl 22

System Interface Parameters

Instruction

EXTEST

BYPASS

IDCODE

HIGHZ

CLAMP

SAMPLE/PRELOAD

RESERVED

NOTES:

Code

0000

1111

0010

0100

0011

0001

All other codes

Description

Forces contents of the boundary scan cells onto the device outputs (1) .

Places the boundary scan register (BSR) between TDI and TDO.

Places the bypass register (BYR) between TDI and TDO.

Loads the ID register (IDR) with the vendor ID code and places the

register between TDI and TDO.

Places the bypass register (BYR) between TDI and TDO. Forces all

device output drivers to a High-Z state.

Uses BYR. Forces contents of the boundary scan cells onto the device

outputs. Places the bypass register (BYR) between TDI and TDO.

Places the boundary scan register (BSR) between TDI and TDO.

SAMPLE allows data from device inputs (2) and outputs (1) to be captured

in the boundary scan cells and shifted serially through TDO. PRELOAD

allows data to be input serially into the boundary scan cells via the TDI.

Several combinations are reserved. Do not use codes other than those

identified above.

5670 tbl 23

1. Device outputs = All device outputs except TDO.

2. Device inputs = All device inputs except TDI, TMS, and TRST .

3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local

IDT sales representative.

25

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

IDT70T651S12DRI IC SRAM 9MBIT 12NS 208QFP

IDT70T653MS12BCI IC SRAM 18MBIT 12NS 256BGA

IDT70V05L55G IC SRAM 64KBIT 55NS 68PGA

IDT70V06L55G IC SRAM 128KBIT 55NS 68PGA

IDT70V07L35G IC SRAM 256KBIT 35NS 68PGA

IDT70V08S15PF IC SRAM 512KBIT 15NS 100TQFP

IDT70V09L20PFI IC SRAM 1MBIT 20NS 100TQFP

IDT70V18L20PFI IC SRAM 576KBIT 20NS 100TQFP

相关代理商/技术参数

IDT70T633S10BCI8 功能描述:IC SRAM 9MBIT 10NS 256BGA RoHS:否类别:集成电路 (IC) >> 存储器系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽）供应商设备封装:8-SOIC 包装:带卷 (TR)

IDT70T633S10BF 功能描述:IC SRAM 9MBIT 10NS 208FBGA RoHS:否类别:集成电路 (IC) >> 存储器系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽）供应商设备封装:8-SOIC 包装:带卷 (TR)

IDT70T633S10BF8 功能描述:IC SRAM 9MBIT 10NS 208FBGA RoHS:否类别:集成电路 (IC) >> 存储器系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽）供应商设备封装:8-SOIC 包装:带卷 (TR)

IDT70T633S10BFG 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 10NS 208FPBGA

IDT70T633S10BFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 10NS 208FPBGA

IDT70T633S10BFI 功能描述:IC SRAM 9MBIT 10NS 208FBGA RoHS:否类别:集成电路 (IC) >> 存储器系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽）供应商设备封装:8-SOIC 包装:带卷 (TR)

IDT70T633S10BFI8 功能描述:IC SRAM 9MBIT 10NS 208FBGA RoHS:否类别:集成电路 (IC) >> 存储器系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽）供应商设备封装:8-SOIC 包装:带卷 (TR)

IDT70T633S10DD 功能描述:IC SRAM 9MBIT 10NS 144TQFP RoHS:否类别:集成电路 (IC) >> 存储器系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18）速度:200MHz 接口:并联电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15）包装:托盘其它名称:71P71804S200BQ